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2SB1018

Toshiba
Part Number 2SB1018
Manufacturer Toshiba
Description SILICON PNP TRANSISTOR
Published Jul 17, 2018
Detailed Description : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPL...
Datasheet PDF File 2SB1018 PDF File

2SB1018
2SB1018

Overview
: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm POWER AMPLIFIER APPLICATIONS.
FEATURES .
High Collector Current : Ic=-7A .
Low Collector Saturation Voltage : V CE ( sat )=-0.
5V(Max.
) at I C=-4A .
Complementary to 2SD1411 MAXIMUM RATINGS (Ta= 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation Ta=25°C Tc=25°C PC Junction Temperature Tj Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) RATING UNIT -100 V -80 V -5 V -7 A -1 A 2.
0 W 30 150 °C -55^150 °C 10.
3MAX.
11* i K[ J...


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