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2SC1164

Toshiba
Part Number 2SC1164
Manufacturer Toshiba
Description SILICON NPN TRANSISTOR
Published Jul 17, 2018
Detailed Description SILICON NPN EPITAXIAL PLANAR TYPE 2SC1164 HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. Unit in mm 09.39MAX. FEATURES ...
Datasheet PDF File 2SC1164 PDF File

2SC1164
2SC1164

Overview
SILICON NPN EPITAXIAL PLANAR TYPE 2SC1164 HIGH POWER AMPLIFIER FOR CATV APPLICATIONS.
Unit in mm 09.
39MAX.
FEATURES .
Wide Band and High Gain for Class A Amplifier.
7- 8.
45MAX X1 < ]haracteristics .
All Electrodes Insulated frc m Case.
00.
4 5 s o5 1 ^5.
0 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO ic PC T J T stg RATING UNIT 50 V 35 V 3V 300 mA 600 mW 150 °C -55 -150 °C '? ~?>s A 3\ 4t\A \\^^\Vs%H\y O-/ JEDEC EIAJ TOSHIBA i- EMITTER 2.
BASE 3.
COLLECTOR 4.
CASE TO-33 TC-5, TB-14B 2-8D1A ELEC...


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