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2SC3299

Toshiba
Part Number 2SC3299
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 17, 2018
Detailed Description :h SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm FEATURES . Low Collector ...
Datasheet PDF File 2SC3299 PDF File

2SC3299
2SC3299

Overview
:h SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm FEATURES .
Low Collector Saturation Voltage : VcE(sat)=0.
4V(Max.
) at Ic=3A , High Speed Switching Time : t st g=l .
0/is(Typ .
) 10.
3MAX.
—70 03.
2±O.
2 r 1/ / i < A\ei j X < s rfl -H o r-' .
Complementary to 2SA1307 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO RATING 60 50 UNIT j ' 1.
4 + 0.
25 0.
76-0.
15 I ,1 1.
2 2.
54±0.
25 2.
54 ±0.
25 • .
.
.
s H oo + 1 —-I—! Collector Current Base Current Collector Power Dissipation Ta=25 C Tc=25°C ic IB PC 2.
0 20 1.
BASE 2.
COLLECTOR 3.
EMITTER Junction Temp...


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