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2SD1409

Part Number	2SD1409
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Jul 16, 2018
Detailed Description	: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATUR...
Datasheet	2SD1409 PDF File

Overview

: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES .
High DC Current Gain : hFE=600(Min.
) ( V CE=2V, I C=2A) .
Monolithic Construction with Built-in 3ase-Emitter Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 600 400 UNIT V V INDUSTRIAL APPLICATIONS Unit in mm 10.
3MAX.
7.
0 03.
2±O.
2 / J-r~ J wJrf rt C5 H o r-' to 1 * 1.
4 ,1 + 0.
25 Q76-ai5 1.
2 z M S ::: N Emitter-Base Voltage VEBO 5 Collector Current ic 6 Base Current Collector Power Dissipation u Ta=25 C u Tc=25 C IB pC 1 2.
0 25 Junction Temperature Ti 150 Stora...

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