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2N3716

Part Number	2N3716
Manufacturer	Toshiba
Description	GENERAL PURPOSE POWER TRANSISTOR
Published	Jul 16, 2018
Detailed Description	: SILICON NPN TRIPLE DIFFUSED TYPE 33 2N3716 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID...
Datasheet	2N3716 PDF File

Overview

: SILICON NPN TRIPLE DIFFUSED TYPE 33 2N3716 GENERAL PURPOSE POWER TRANSISTOR.
POWER REGULATOR, SWITCHING AND SOLENOID DRIVE APPLICATIONS.
FEATURES .
High Gain at High Current .
Low Saturation Voltage : VcE(sat)=0.
8V @ IC=5A, IB=0.
5A .
Excellent Area of Safe Operatings Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC jc L stg RATING 100 80 UNIT 10 150 1.
17 200 -65-200 'C/W 1.
BASE 2.
EMITTER COLLECTOR (CASE) TO—2 4MA/T0— EIAJ TOSHIBA TC— 3 , TB— 2— 21D1A Weight : 12.
i ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.
TYP.
Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain ICEX ICEX lEBO ** VCEO(SUS) hFE Base-Em...

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