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2N3713

Part Number	2N3713
Manufacturer	Toshiba
Description	GENERAL PURPOSE POWER TRANSISTOR
Published	Jul 16, 2018
Detailed Description	SILICON NPN TRIPLE DIFFUSED TYPE 2N3713 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIV...
Datasheet	2N3713 PDF File

Overview

SILICON NPN TRIPLE DIFFUSED TYPE 2N3713 GENERAL PURPOSE POWER TRANSISTOR.
POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS.
FEATURES: .
High Gain at High Current .
Low Saturation Voltage : VcE(sat) =1 - ov (Max.
) @ IC=5A, Ib=0.
5A .
Excellent Area of Safe Operatings MAXIMUM RATINGS (•Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature ' Storage Temperature Range SYMBOL VcBO VCEO VEBO Unit in mm Weight : 12.
6g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain ICEX VcE=80V, VBE=-1.
5V JCEX V CE=60V, VBE=-1-5V Tc=150°C lEBO VEB=7V, IC=0 ** vCEO(SUS) IC=200mA, Ib=0 nFE V CE=2V, IC=1A V CE=2V, IC=3A Base-Emitter Voltage VBE Saturation Collector-Emitter VcE...

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