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BU326A

Toshiba
Part Number BU326A
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jul 16, 2018
Detailed Description : SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CBO...
Datasheet PDF File BU326A PDF File

BU326A
BU326A

Overview
: SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS.
FEATURES .
High Voltage : V CBO=900V .
High Peak Current Capability : Ic(Peak) =8A • Fall Time : tf=0.
5/»s (Max.
) .
Glass Passivated Collector-Base Junction.
33 BU326A Unit in mm 025OMAX.
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VcBO VCEO Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation (Tc=25°C) 'EBO ic ICP PC Junction Temperature Storage Temperature Range L stg RATING 900 400 60 150 -65-150 UNIT 1.
BASE 2.
EMITTER COLLECTOR (CASE) JEDEC EIAJ TOSHIBA TO— TC— 3, TB— 2-2 1B1A Mounting Kit No.
AC42C W...


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