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2N5474

ETC
Part Number 2N5474
Manufacturer ETC
Description P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Published Jul 14, 2018
Detailed Description 2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transisto...
Datasheet PDF File 2N5474 PDF File

2N5474
2N5474

Overview
2NS471 (SILICON) thru 2NS476 P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion mode Junction Field-Effect Transistors designed for general-purpose amplifier and switching applications.
• High Gate·Source Breakdown Voltage V(BR)GSS = 40 Vdc (Min) for All Types • High DC Input Resistance IGSS = 100 pAdc (Max) @ VGS = 10 Vdc • Low Reverse Transfer Capacitance Crss = 1.
0pF (Max)@VDs=-15Vdc • Tight IDSS Range for Easier Circuit Design • Drain and Source Interchangeable P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS 'MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Total Power Dissipation @TA = 250 C Derate above 2SoC Operating Channel Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data.
Symbol VOG VGSR IGF Po Tchannel T stg Value 40 40 10 300 2.
0 -65 to +175 -65 to +200 Unit Vde Vde mAde mW mW/oC °c °c -18~IrrdcB SEATING PLANE .
- _ F _ _tI K ~ STYLE 2 PIN 1.
SOURCE 2.
GATE 3.
ORAIN 4.
SUBSTRATE...


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