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BC857A

STMicroelectronics

SMALL SIGNAL PNP TRANSISTORS - STMicroelectronics


BC857A
BC857A

PDF File BC857A PDF File



Description
BC857 BC858 SMALL SIGNAL PNP TRANSISTORS Type BC857A BC857B BC858A BC858B s Marking 3E 3F 3J 3K 2 3 1 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter BC857 Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max.
O perating Junction Temperature -50 -50 -45 -5 -0.
1 -0.
2 -0.
2 -0.
2 300 -65 to 150 150 Value BC858 -30 -30 -30 V V V V A A A A mW o o Uni t C C October 1997 1/5 BC857/BC858 THERMAL DATA R t hj-amb • R th j-SR • Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330 o o C/W C/W • Mounted on a ceramic substrate area = 10 x 8 x 0.
6 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = -30 V V CE = -30 V I C = -10 µ A for BC857 for BC858 I C = -10 µ A for BC857 for BC858 I C = -2 mA for BC857 for BC858 I C = -10 µ A for BC857 for BC858 I C = -10 mA I C = -100 mA I C = -10 mA I C = -100 mA I C = -2 mA I C = -10 mA I C = -10 µ A for g rou p A for g rou p B I C = -2 mA for g rou p A for g rou p B I B = -0.
5 mA IB = -5 mA I B = -0.
5 mA IB = -5 mA V CE = -5 V VCE = -5 V V CE = -5 V 90 150 VCE = -5 V 110 200 180 290 150 6 2 1.
2 10 4 220 450 MHz pF dB dB -0.
6 Ta mb = 150 o C -50 -30 -50 -30 -45 -30 -6 -5 -0.
09 -0.
25 -0.
75 -0.
9 -0.
66 -0.
72 -0.
75 -0.
82 -0.
3 -0.
65 Min.
Typ .
Max.
-15 -5 Un it nA µA V V V V V V V V V V V V V V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V BE = 0) V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)...



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