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2N5669

Part Number	2N5669
Manufacturer	ETC
Description	SILICON N-CHANNEL JUNCTION FET
Published	Jul 12, 2018
Detailed Description	2N5668 (SILICON) 2N5669 2N5670 SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Fiel...
Datasheet	2N5669 PDF File

Overview

2N5668 (SILICON) 2N5669 2N5670 SILICON N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS Depletion Mode (TypeA) Junction Field-EffectTransistors designed for VHF amplifier and mixer applications.
• Low Cross Modulation and Intermodulation Distortion • Drain and Source Interchangeable • Low 100-MHz Noise Figure - NF = 2.
5 dB (Max) • Low Reverse Transfer and Input Capcitances- Crss = 1.
0 pF (Typ); Ciss =4.
7 pF (Typ) • High Maximum Stable Gain Due to Drain and Gate Lead Separation N·CHANNEL JUNCTION FIELD·EFFECT TRANSISTORS (Type A) *MAXIMUM RATINGS Rating Drain-Source Voltage ·Drain-Gate Voltage *Reverse Gate-SOu~ce Voltage ·Forward Gate Current Drain Current *Total Device Dissipation@TA = 250 C...

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