NPN High-Power Transistor - ON Semiconductor
Description
BD249C
NPN High−Power Transistor
NPN high−power transistors are for general−purpose power amplifier and switching applications.
Features
• ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
• Epoxy Meets UL 94 V−0 @ 0.
125 • Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous Peak (Note 1)
VCEO VCBO VEBO
IC
100 100 5.
0
25 40
Vdc Vdc Vdc
Adc Apk
Base Current − Continuous Total Device Dissipation @ TC = 25°C
Derate above 25°C
IB PD
5.
0 Adc 125 W 1.
0 W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg – 65 to +150
°C
Unclamped Inductive Load
ESB 90 mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.
0 °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
35.
7 °C/W
Stresses exceeding Maximum Ratings may damage the device.
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