PNP Transistor - Infineon
Description
PNP Silicon AF Transistors
• For general AF applications • High current gain • Low collector-emitter saturation voltage • Complementary types: BCW66.
.
.
(NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101
BCW67, BCW68
32 1
Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H
Marking DAs DBs DCs DFs DGs DHs
Pin Configuration 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C 1=B 2=E 3=C
Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23
1 2011-09-15
BCW67, BCW68
Maximum Ratings Parameter
Symbol
Value
Collector-emitter voltage BCW67 BCW68
VCEO
32 45
Collector-base voltage BCW67 BCW68
VCBO
45 60
Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation, TS ≤ 79°C Junction temperature
VEBO IC ICM IB IBM Ptot Tj
5 800 1 100 200 330 150
Storage temperature
Tstg -65 .
.
.
150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 215
1For ...
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