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BC846B

Siemens Semiconductor Group
Part Number BC846B
Manufacturer Siemens Semiconductor Group
Description NPN Silicon AF Transistors
Published Mar 23, 2005
Detailed Description NPN Silicon AF Transistors BC 846 ... BC 850 Features q q q q q For AF input stages and driver applications High curr...
Datasheet PDF File BC846B PDF File

BC846B
BC846B


Overview
NPN Silicon AF Transistors BC 846 .
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BC 850 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs Ordering Code (tape and reel) Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 Q62702-C1885 Q62702-C1712 Pin Configuration 1 2 3 B E C Package1) SOT-23 1)For detailed information see chapter Package Outlines.
Semiconductor Group 1 04.
96 BC 846 .
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BC 850 Maximum Ratings Parameter Symbol BC 846 Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BC 847 BC 850 45 50 50 6 100 200 200 200 330 150 Unit BC 848 BC 849 30 30 30 5 mA V VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg 65 80 80 6 mW ˚C – 65 … + 150 310 240 K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 2 BC 846 .
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BC 850 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 846 BC 847, BC 850 BC 848, BC 849 Collector-base breakdown voltage IC = 10 µA BC 846 BC 847, BC 850 BC 848, BC 849 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 846 BC 847, BC 850 BC 848, BC 849 Emitter-base breakdown voltage IE = 1 µA BC 846, BC 847 BC 848, BC 849, BC 850 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C DC current gain IC = 10 µA, V...


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