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BC818W

Infineon Technologies AG
Part Number BC818W
Manufacturer Infineon Technologies AG
Published Mar 23, 2005
Description NPN Silicon AF Transistors
Detailed Description BC817W, BC818W NPN Silicon AF Transistors  For general AF applications  High collector current  High current gain  L...
Datasheet PDF File BC818W PDF File

BC818W
BC818W


Overview
BC817W, BC818W NPN Silicon AF Transistors  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary types: BC807W, BC808W (PNP) 3 2 1 VSO05561 Type BC817-16W BC817-25W BC817-40W BC818-16W BC818-25W BC818-40W Maximum Ratings Parameter Marking 6As 6Bs 6Cs 6Es 6Fs 6Gs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT323 SOT323 SOT323 SOT323 SOT323 SOT323 Symbol VCEO VCBO VEBO BC817W 45 50 5 500 1 100 200 250 150 BC818W 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 .
.
.
150 Thermal Resistance Junction - soldering point1) RthJS 80 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817W, BC818W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 mA, VCE = 1 V h FE-grp.
16 h FE-grp.
25 h FE-grp.
40 DC current gain 1) IC = 300 mA, VCE = 1 V hFE-grp.
16 hFE-grp.
25 hFE-grp.
40 Collector-emitter saturation voltage1) IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA VBEsat VCEsat hFE hFE IEBO ICBO ICBO V(BR)CEO typ.
max.
Unit V 45 25 100 50 100 nA µA nA 100 160 250 160 250 350 250 400 630 BC817W BC818W V(BR)CBO BC817W BC818W V(BR)EBO 50 30 5 - 60 100 170 - - 0.
7 1.
2 V 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-29-2001 BC817W, BC81...


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