DatasheetsPDF.com

BC818-25W

Part Number	BC818-25W
Manufacturer	NXP
Description	NPN general purpose transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product speciﬁcation S...
Datasheet	BC818-25W PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC817W NPN general purpose transistor Product speciﬁcation Supersedes data of 1997 Mar 05 1999 Apr 15 Philips Semiconductors Product speciﬁcation NPN general purpose transistor FEATURES • High current (max.
500 mA) • Low voltage (max.
45 V).
APPLICATIONS • General purpose switching and amplification.
DESCRIPTION NPN transistor in a SOT323 plastic package.
PNP complement: BC807W.
MARKING TYPE NUMBER BC817W BC817-16W BC817-25W BC817-40W Note 1.
∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.
1 MARKING CODE(1) 6D∗ 6A∗ 6B∗ 6C∗ TYPE NUMBER BC818W BC818-16W BC818-25W BC818-40W MARKING CODE(1) 6H∗ 6E∗ 6F∗ 6G∗ 1 Top view 2 MAM062 BC817W PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 3 1 2 Simplified outline (SOT323) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base; IC = 10 mA open collector − − − − − − − −65 − −65 MIN.
MAX.
50 45 5 500 1 200 200 +150 150 +150 V V V mA A mA mW °C °C °C UNIT 1999 Apr 15 2 Philips Semiconductors Product speciﬁcation NPN general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC817W BC817-16W BC817-25W BC817-40W DC current gain VCEsat VBE Cc fT Note 1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.
02.
collector-emitter saturation voltage base-emitter voltage collector capacitance transition f...

Similar Datasheet

BC818-25 NPN Silicon AF Transistors - Siemens Semiconductor Group
BC818-25 NPN Silicon AF Transistors - Infineon Technologies AG
BC818-25 SMD General Purpose NPN Transistors - Diotec
BC818-25 NPN General Purpose Amplifier - GME
BC818-25 SILICON NPN TRANSISTORS - Central Semiconductor
BC818-25W NPN general purpose transistor - NXP
BC818-25W NPN Silicon AF Transistor - Siemens Semiconductor Group
BC818-25W NPN Silicon AF Transistors - Infineon Technologies AG
BC818-25W SMD General Purpose NPN Transistors - Diotec
BC818-25W NPN Silicon Epitaxial Planar Transistors - SEMTECH

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)