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BC550

NXP
Part Number BC550
Manufacturer NXP
Description NPN general purpose transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product specific...
Datasheet PDF File BC550 PDF File

BC550
BC550

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC549; BC550 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 20 1999 Apr 22 Philips Semiconductors Product specification NPN general purpose transistors FEATURES • Low current (max.
100 mA) • Low voltage (max.
45 V).
APPLICATIONS • Low noise stages in audio frequency equipment.
DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
1 handbook, halfpage BC549; BC550 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 3 2 1 MAM182 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BC549 BC550 VCEO collector-emitter voltage BC549 BC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 30 50 V V MIN.
MAX.
UNIT 1999 Apr 22 2 Philips Semiconductors Product specification NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC549C; BC550C VCEsat VBEsat VBE Cc Ce fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure IC = 10 µA; VCE = 5 V; see Fig.
2 IC = 2 mA; VCE = 5 V; see Fig.
2 IC = 10 mA; IB = 0.
5 mA IC = 100 mA; IB = 5 mA IC = 10 mA; IB = 0.
5 mA; note 1 IC = 100 mA; IB = 5 mA; no...


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