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CS60N06

CASS
Part Number CS60N06
Manufacturer CASS
Description N-Channel Trench Power MOSFET
Published Jun 23, 2018
Detailed Description N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high...
Datasheet PDF File CS60N06 PDF File

CS60N06
CS60N06


Overview
N-Channel Trench Power MOSFET General Description The CS60N06 is N-channel MOS Field Effect Transistor designed for high current switching applications.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features ● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.
2mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS60N06 To-220 Top View Schematic Diagram VDS = 60 V ID = 80 A RDS(ON) = 6.
2 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS60N06 CS60N06 TO-220 Reel Size - Table 1.
Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Po...


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