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BC517

Siemens Semiconductor Group
Part Number BC517
Manufacturer Siemens Semiconductor Group
Description NPN Silicon Darlington Transistor
Published Mar 23, 2005
Detailed Description NPN Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 516 (PNP) BC 51...
Datasheet PDF File BC517 PDF File

BC517
BC517

Overview
NPN Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 516 (PNP) BC 517 BC 517 2 3 11 Type BC 517 Marking – Ordering Code Q62702-C825 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values Unit 30 V 40 10 500 mA 800 100 200 625 mW 150 ˚C – 65 … + 150 Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) For detailed information see chapter Package Outlines.
2) Mounted on Al heat sink 15 mm × 25 mm × 0.
5 mm.
Semiconductor Group 1 5.
91 BC 517 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V1) Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.
1 mA Base-emitter voltage1) IC = 10 mA; VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Symbol Values Unit min.
typ.
max.
V(BR)CE0 30 – V(BR)CB0 40 – V(BR)EB0 10 – ICB0 –– –– IEB0 – – hFE 30 000 – VCEsat – – VBE – – –V – – 100 nA 10 µA 100 nA –– 1V 1.
4 fT Cobo – – 150 – 3.
5 – MHz pF 1) Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group 2 BC 517 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC) VCE = 5 V, f = 20 MHz Semiconductor Group 3 BC 517 Collector-emitter saturation voltage IC = f (VCEsat...


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