DatasheetsPDF.com

BC517

NXP
Part Number BC517
Manufacturer NXP
Description NPN Darlington transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersede...
Datasheet PDF File BC517 PDF File

BC517
BC517

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors NPN Darlington transistor Product specification BC517 FEATURES • High current (max.
500 mA) • Low voltage (max.
30 V) • Very high DC current gain (min.
30000).
APPLICATIONS • Where very high amplification is required.
DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package.
PNP complement: BC516.
PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage 1 2 3 23 TR1 TR2 1 MAM302 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter VBE = 0 open collector Tamb ≤ 25 °C; note 1 Note 1.
Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − − −65 − −65 MAX.
40 30 10 500 800 100 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 23 2 Philips Semiconductors NPN Darlington transistor Product specification BC517 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Note 1.
Transistor mounted on an FR4 printed-circuit board.
CONDITIONS note 1 VALUE 250 UNIT K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN.
TYP.
MAX.
UNIT ICBO IEBO hFE VCEsat VBEsat VBEon fT collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter on-state voltage transition frequency IE = 0; VCB = 30 V IC = 0; VEB = 10 V IC = 20 mA; VCE = 2 V; see Fig.
2 IC = 100 mA; IB = 0.
1 mA IC = 100 mA; IB ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)