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BC517

Motorola Inc
Part Number BC517
Manufacturer Motorola Inc
Description Darlington Transistors
Published Mar 23, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon Order this document by BC517/D BC517 COLLECTO...
Datasheet PDF File BC517 PDF File

BC517
BC517


Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon Order this document by BC517/D BC517 COLLECTOR 1 BASE 2 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C VCES VCB VEB IC PD 30 Vdc 40 Vdc 10 Vdc 1.
0 Adc 625 mW 12 mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.
5 Watts 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.
3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.
0 mAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 nAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO ICES ICBO IEBO 1 23 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Min Typ Max Unit 30 — — Vdc 40 — — Vdc 10 — — Vdc — — 500 nAdc — — 100 nAdc — — 100 nAdc ©MMotootorroollaa, Small–Signal Inc.
1996 Transistors, FETs and Diodes Device Data 1 BC517 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.
0 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.
1 mAdc) Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.
0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.
0 Vdc, f = 100 MHz) v1.
Pulse Test: Pulse Width 2.
0%.
2.
fT = |hfe| • ftest hFE VCE(sat) VBE(on) fT Min 30,000 — — — Typ — — — 200 Max Unit —— 1.
0 Vdc 1.
4 Vdc — MHz RS...


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