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VST090N10MS

Vanguard Semiconductor
Part Number VST090N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 20, 2018
Detailed Description Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  1...
Datasheet PDF File VST090N10MS PDF File

VST090N10MS
VST090N10MS

Overview
Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance @ VGS=4.
5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VST090N10MS 100V/15A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.
5V ID 100 V 72 mΩ 76 mΩ 15 A TO-220AB Part ID Package Type VST090N10MS TO-220AB Marking 090N10M Tape and reel information 50pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current IAS Avalanche Current Max TC =25°C TC =70°C TC =25°C TC =25°C TC =25°C L=0.
5mH EAS TSTG , TJ Avalanche energy, single pulsed ② Storage and operating temperature range Thermal characteristics RJA Thermal Resistance Junction-Ambient RJC Thermal Resistance-Junction t...


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