DatasheetsPDF.com

VS6888BTD

Vanguard Semiconductor
Part Number VS6888BTD
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  VitoMOS® Te...
Datasheet PDF File VS6888BTD PDF File

VS6888BTD
VS6888BTD

Overview
Features  N-Channel，10V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  VitoMOS® Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VS6888BTD 65V/88A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 65 V 5.
3 mΩ 88 A TO-263 Part ID VS6888BTD Package Type TO-263 Marking 6888BTD Tape and reel information 800pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and oper...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)