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VS3622DE

Vanguard Semiconductor
Part Number VS3622DE
Manufacturer Vanguard Semiconductor
Description Dual N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switc...
Datasheet PDF File VS3622DE PDF File

VS3622DE
VS3622DE

Overview
Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 30 V 10 mΩ 14 mΩ 35 A PDFN3333 Part ID VS3622DE Package Type PDFN3333 Marking 3622DE Tape and reel information 5000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② T...


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