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VS3622DS

Vanguard Semiconductor
Part Number VS3622DS
Manufacturer Vanguard Semiconductor
Description Dual N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  High Effec...
Datasheet PDF File VS3622DS PDF File

VS3622DS
VS3622DS

Overview
Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  High Effective  Pb-free lead plating; RoHS compliant  VS3622DS 30V/12A Dual N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.
5 V ID 30 10 14 12 SOP8 V mΩ mΩ A Part ID VS3622DS Package Type SOP8 Marking 3622DS Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation ...


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