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VSD013N10MS

Vanguard Semiconductor
Part Number VSD013N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche t...
Datasheet PDF File VSD013N10MS PDF File

VSD013N10MS
VSD013N10MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant VSD013N10MS 100V/52A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 11 mΩ R @DS(on),TYP VGS=4.
5 V 12 mΩ I D 52 A TO-252 Part ID VSD013N10MS Package Type TO-252 Marking 013N10M Tape and reel information 3000PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA =10...


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