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VSI160N10MS

Vanguard Semiconductor
Part Number VSI160N10MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  Pb-free lead pla...
Datasheet PDF File VSI160N10MS PDF File

VSI160N10MS
VSI160N10MS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSI160N10MS 100V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.
5 V ID 100 V 150 mΩ 165 mΩ 8A TO-251-S Part ID VSI160N10MS Package Type TO-251-S Marking 160N10 Tape and reel information 80pcs/Tube Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltag...


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