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VS1H18AS

Vanguard Semiconductor
Part Number VS1H18AS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High conversion ...
Datasheet PDF File VS1H18AS PDF File

VS1H18AS
VS1H18AS

Overview
Features  N-Channel  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.
5 V  Fast Switching  High conversion efficiency  Pb-free lead plating; RoHS compliant VS1H18AS 100V/9A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=4.
5 V ID 100 V 16.
5 mΩ 9A SOP8 Part ID VS1H18AS Package Type SOP8 Marking 1H18AS Tape and reel information 3000pcs/reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS IAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Avalanche energy, single pulsed ② Maximum power dissip...


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