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VST008N03MS

Vanguard Semiconductor
Part Number VST008N03MS
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Jun 19, 2018
Detailed Description VST008N03MS 30V/90A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested ...
Datasheet PDF File VST008N03MS PDF File

VST008N03MS
VST008N03MS

Overview
VST008N03MS 30V/90A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VST008N03MS designed by the trench processing techniques to achieve extremely low on-resistance.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications.
Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause perm...


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