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IRF142

Harris
Part Number IRF142
Manufacturer Harris
Description N-Channel Power MOSFETs
Published Jun 19, 2018
Detailed Description Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power ...
Datasheet PDF File IRF142 PDF File

IRF142
IRF142


Overview
Semiconductor July 1998 IRF140, IRF141, IRF142, IRF143 28A and 25A, 80V and 100V, 0.
077 and 0.
100 Ohm, N-Channel Power MOSFETs Features • 28A and 25A, 80V and 100V • rDS(ON) = 0.
077Ω and 0.
100Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Description These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.
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