SILICON ZENER DIODE - Central Semiconductor
Description
1N4099 THRU 1N4135
SILICON ZENER DIODE LOW NOISE
6.
8 VOLT THRU 100 VOLT 250mW, 5% TOLERANCE
w w w.
c e n t r a l s e m i .
c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N4099 series silicon Zener diode is designed for low leakage, low current, and low noise applications.
MARKING: Devices shall either be marked with the prefix ‘C’ followed by the full part number or by the marking code in the Electrical Characteristics Table.
DO-35 CASE
MAXIMUM RATINGS: (TA=25°C) Power Dissipation
Operating and Storage Junction Temperature
SYMBOL PD
TJ, Tstg
250 -65 to +200
UNITS mW °C
ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.
1V MAX @ IF=200mA (for all types)
TYPE
ZENER VOLTAGE VZ @ IZT MIN NOM MAX
TEST CURRENT
IZT
MAXIMUM ZENER
IMPEDANCE
ZZT @ IZT
MAXIMUM REVERSE CURRENT
IR @ VR
MAXIMUM ZENER
CURRENT
IZM
MAXIMUM NOISE
DENSITY
ND @ 250μA
V
V
V
μA
Ω
μA
V
mA
μV/ Hz
1N4099 6.
460 6.
8 7.
140
250
200
10
5.
2
35.
0
40
1N4100 7.
125 7.
5 7.
875
250
200
10
5.
7
31.
8
40
1N4101 7.
790 8.
2 8.
610
250
200
1.
0 6.
3
29.
0
40
1N4102 8.
265 8.
7 9.
135
250
200
1.
0 6.
7
27.
4
40
1N4103 8.
645 9.
1 9.
555
250
200
1.
0 7.
0
26.
2
40
1N4104 9.
50 10 10.
50
250
200
1.
0 7.
6
24.
8
40
1N4105 10.
45 11 11.
55
250
200
0.
05 8.
5
21.
6
40
1N4106 11.
40 12 12.
60
250
200
0.
05 9.
2
20.
4
40
1N4107 12.
35 13 13.
65
250
200
0.
05 9.
9
19.
0
40
1N4108 13.
30 14 14.
70
250
200
0.
05 10.
7
17.
5
40
1N4109 14.
25 15 15.
75
250
100
0.
05 11.
4
16.
3
40
1N4110 15.
20 16 16.
80
250
100
0.
05 12.
2
15.
4
40
1N4111 16.
15 17 17.
85
250
100
0.
05 13.
0
14.
5
40
1N4112 17.
10 18 18.
90
250
100
0.
05 13.
7
13.
2
40
1N4113 18.
05 19 19.
95
250
150
0.
05 14.
5
12.
5
40
1N4114 19.
00 20 21.
00
250
150
0.
01 15.
2
11.
9
40
1N4115 20.
90 22 23.
10
250
150
0.
01 16.
8
10.
8
40
1N4116 22.
80 24 25.
20
250
150
0.
01 18.
3
9.
9
40
1N4117 23.
75 25 26.
25
250
150
0.
01 19.
0
9.
5
40
1N4118 25.
65 27 28.
35
250
150
0.
01 20.
5
8.
8
40
1N4119 26.
60 28 29.
40
250
200
0.
01 21.
3
8.
5
40...
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