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NCEP30T19G

NCE Power Semiconductor
Part Number NCEP30T19G
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G...
Datasheet PDF File NCEP30T19G PDF File

NCEP30T19G
NCEP30T19G

Overview
http://www.
ncepower.
com Pb Free Product NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency switching and synchronous rectification.
General Features ● VDS =30V,ID =185A RDS(ON)=1.
1mΩ (typical) @ VGS=10V RDS(ON)=1.
45mΩ (typical) @ VGS=4.
5V Schematic Diagram DDDD DDDD ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 150 °C operating temperature ● Pb-free le...


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