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NCE01P30K

NCE Power Semiconductor
Part Number NCE01P30K
Manufacturer NCE Power Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 2, 2018
Detailed Description http://www.ncepower.com Pb Free Product NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30...
Datasheet PDF File NCE01P30K PDF File

NCE01P30K
NCE01P30K

Overview
http://www.
ncepower.
com Pb Free Product NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.
5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic diagram Application ● Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L...


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