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MSN014WE

MORESEMI
Part Number MSN014WE
Manufacturer MORESEMI
Description N-Channel Enhancement Mode Power MOSFET
Published May 29, 2018
Detailed Description MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5...
Datasheet PDF File MSN014WE PDF File

MSN014WE
MSN014WE

Overview
MSN014WE 20V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.
5V RDS(ON) <9 mΩ @ VGS=2.
5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Application ● PWM application ● Load switch PIN Configuration Lead Free Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0214WE MSN0214WE SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sour...


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