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HGTD7N60C3S

HARRIS
Part Number HGTD7N60C3S
Manufacturer HARRIS
Description UFS Series N-Channel IGBT
Published May 18, 2018
Detailed Description HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features...
Datasheet PDF File HGTD7N60C3S PDF File

HGTD7N60C3S
HGTD7N60C3S

Overview
HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT Features • 14A, 600V at TC = +25oC • 600V Switching SOA Capability • Typical Fall Time - 140ns at TJ = +150oC • Short Circuit Rating • Low Conduction Loss Description The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBT is ideal for many high voltage switching applications...


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