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BCP69

Infineon Technologies AG
Part Number BCP69
Manufacturer Infineon Technologies AG
Description PNP Silicon AF Transistor
Published Mar 23, 2005
Detailed Description BCP69 PNP Silicon AF Transistor  For general AF applications  High collector current  High current gain  Low collect...
Datasheet PDF File BCP69 PDF File

BCP69
BCP69


Overview
BCP69 PNP Silicon AF Transistor  For general AF applications  High collector current  High current gain  Low collector-emitter saturation voltage  Complementary type: BCP68 (NPN) 4 3 2 1 VPS05163 Type BCP69 BCP69-10 BCP69-16 BCP69-25 Maximum Ratings Parameter Marking BCP 69 1=B BCP 69-10 1 = B BCP 69-16 1 = B BCP 69-25 1 = B Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E 4=C 4=C 4=C 4=C Package SOT223 SOT223 SOT223 SOT223 Symbol VCEO VCES VCBO VEBO Values 20 25 25 5 1 2 100 200 1.
5 150 -65 .
.
.
150 Unit V V V A mA W °C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BCP69 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V hFE hFE ICBO ICBO V(BR)EBO V(BR)CBO V(BR)CES V(BR)CEO Symbol min.
Values typ.
max.
Unit 20 25 25 5 50 - 100 100 - V nA µA - BCP69 BCP69-10 BCP69-16 BCP69-25 85 85 100 160 hFE VCEsat VBE(ON) 100 160 250 - 375 160 250 375 0.
5 V DC current gain 1) IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V 60 - - 0.
6 - 1 AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1) Pulse test: t ≤=3...


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