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BL3N65

Part Number	BL3N65
Manufacturer	GME
Description	N-Channel Power Mosfet
Published	May 18, 2018
Detailed Description	3A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =3.8Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-...
Datasheet	BL3N65 PDF File

Overview

3A,650V N-Channel Power Mosfet FEATURES  RDS(ON) =3.
8Ω@ VGS = 10V  Ultra low gate charge ( typical 10 nC ) Pb Lead-free  Low reverse transfer Capacitance ( CRSS = typical 5.
5 pF )  Fast switching capability  Avalanche energy specified  Improved dv/dt capability, high ruggedness Production specification BL3N65 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage VGSS Gate -Source voltage ID Continuous Drain Current IDM EAS EAR dv/dt PD RθJA TJ Pulsed Drain Current Avalanche Energy Single Pulsed Repetitive Peak Diode Recovery dv/dt Power Dissipation Thermal resistance,Junction-to-Ambient Junction Temperature TOPR, Tstg Ope...

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