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BL6N70

Part Number	BL6N70
Manufacturer	GME
Description	N-Channel Power Mosfet
Published	May 18, 2018
Detailed Description	N-Channel Power MOSFET FEATURES  RDS(ON)=1.6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically...
Datasheet	BL6N70 PDF File

Overview

N-Channel Power MOSFET FEATURES  RDS(ON)=1.
6Ω @ VGS=10V, ID=3A  Low gate charge (Typically 51nC)  Low CRSS (Typically 45pF)  High switching speed.
Production specification BL6N70 MAXIMUM RATINGS (TC=25°C, unless otherwise specified) Symbol Parameter TO-220AB Value Unit VDS Drain-Source Voltage 700 V VGS ID IDM PD EAS EAR RθJA RθJC Tj Tstg Gate -Source Voltage Drain Current Continuous at Drain Current(pulsed)Note1 TC=25℃ TC=100°C Power Dissipation Linear Derarting Factor Avalanche Energy(Single Pulsed (Note 3)) Avalanche Energy (Repetitive(Note 2)) Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Junction and StorageTemperature Range ±30 V 6 A 4 2...

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