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2SD1898

Part Number	2SD1898
Manufacturer	GME
Description	Power Transistor
Published	May 17, 2018
Detailed Description	Production specification Power Transistor(80V,1A) FEATURES  High VCEO,VCEO=80V.  High IC,IC=1A(DC).  Good HFE Linear...
Datasheet	2SD1898 PDF File

Overview

Production specification Power Transistor(80V,1A) FEATURES  High VCEO,VCEO=80V.
 High IC,IC=1A(DC).
 Good HFE Linearity.
 Low VCE(sat).
 Complement the 2SB1260.
Pb Lead-free 2SD1898 APPLICATIONS  NPN silicon transistor.
ORDERING INFORMATION Type No.
Marking 2SD1898 DF SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 1A IC Collector Current -pulse PC Collector Dissipation Tj,Tstg Junction and Storage Temperature Note1:Mounted on ceramic substrate(250mm2*0.
8t) 2 0.
5 1.
3 Note1 -55 to +150 A W W ℃ E087 Rev.
A www.
gmesemi.
com 1 Production specification Power Transistor(80V,1A) 2SD1898 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC...

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