2SD1760 Datasheet

2SD1760 Power Transistor

Power Transistor FEATURES  Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)  Complements the 2SB1184. APPLICATIONS  Epitaxial planar type.  NPN silicon transistor. Pb Lead-free Production specification 2SD1760 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specifi.

Features

 Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
 Complements the 2SB1184. APPLICATIONS
 Epitaxial planar type.
 NPN silicon transistor. Pb Lead-free Production specification 2SD1760 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 3A ICP Collector Current(Pulse) 4.5 A IB Base Current 1A PC Collector Power Dissipation 1.5 W Tj ,Tstg Junction and Storage temperature range -55 to.