NPN Transistor - JCST
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
TO-252-2L Plastic-Encapsulate Transistors
2SD1758 TRANSISTOR (NPN)
TO-252-2L
1.
BASE
FEATURES z Low VCE(sat).
VCE(sat) = 0.
5V (Typ.
)(IC/IB =2A/0.
2A)
2.
COLLECTOR 3.
EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
32 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous 2 A
PC Collector dissipation
1.
2 W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC=0
ICBO
VCB=20V...
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