Medium Power Transistor - GME
Description
Medium Power Transistor
FEATURES
Low VCE(sat).
VCE(sat)=0.
5V(Typ.
) (IC/IB=2A/0.
2A)
Complements the 2SB1182.
APPLICATIONS
Epitaxial planar type.
NPN silicon transistor.
Pb
Lead-free
Production specification
2SD1758
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
40 V
VCEO
Collector-Emitter Voltage
32 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
2A
ICP Collector Current(Pulse)
2.
5 A
IB Base Current
1A
PC Collector Power Dissipation
2W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
W016 Rev.
A
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Production specification
Medium Power Transistor
2SD1758
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX
UNIT
Collector-base breakdown voltage VCBO
IC=50uA,IE=0
40
V
Collector-emitter breakdown voltage VCEO
IC=1mA,IB=0
32
V
Emitter-base bre...
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