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2SC3303

Part Number	2SC3303
Manufacturer	GME
Description	Silicon NPN Transistor
Published	May 10, 2018
Detailed Description	Silicon NPN Epitaxial Type FEATURES  Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).  High speed switchi...
Datasheet	2SC3303 PDF File

Overview

Silicon NPN Epitaxial Type FEATURES  Low collector saturation voltage: VCE(sat)=0.
4V(max)(IC=3A).
 High speed switching time:tstg=1us(typ).
Pb Lead-free APPLICATIONS  High Current Switching Applications.
 DC-DC Converter Applications.
Production specification 2SC3303 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current(DC) 5A ICP Collector Current(Pulse) 8A IB Base Current 1A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V...

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