DatasheetsPDF.com

2SC2983

Part Number	2SC2983
Manufacturer	GME
Description	Silicon NPN Transistor
Published	May 10, 2018
Detailed Description	Silicon NPN Epitaxial Type FEATURES  High transition frequency:fT=100MHz(typ).  Complementary to 2SA1225. Pb Lead...
Datasheet	2SC2983 PDF File

Overview

Silicon NPN Epitaxial Type FEATURES  High transition frequency:fT=100MHz(typ).
 Complementary to 2SA1225.
Pb Lead-free APPLICATIONS  Power Amplifier Applications.
 Driver Stage Amplifier Applications.
Production specification 2SC2983 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5V IC Collector Current 1.
5 A IB Base Current 0.
3 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)011 Rev.
A www.
gmesemi.
com 1 Production specification Si...

Similar Datasheet

2SC2901 NPN SILICON TRANSISTOR - NEC
2SC2901 NPN Silicon Epitaxial Planar Transistor - SEMTECH
2SC2901 NPN Silicon Epitaxial Planar Transistor - Bluecolour
2SC2901 NPN Silicon Epitaxial Planar Transistor - PACO
2SC2902 NPN Transistor - INCHANGE
2SC2902 SILICON POWER TRANSISTOR - SavantIC
2SC2904 NPN TRANSISTOR - Mitsubishi Electric Semiconductor
2SC2904 NPN SILICON RF POWER TRANSISTOR - ASI
2SC2904 Silicon NPN POWER TRANSISTOR - HGSemi
2SC2905 NPN TRANSISTOR - Mitsubishi Electric Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)