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2SB1189

GME
Part Number 2SB1189
Manufacturer GME
Description Medium power transistor
Published May 2, 2018
Detailed Description Medium power transistor(-80V,-0.7A) FEATURES  High breakdown voltage,BVCEO=-80V, And high current,IC=-0.7A.  Compleme...
Datasheet PDF File 2SB1189 PDF File

2SB1189
2SB1189

Overview
Medium power transistor(-80V,-0.
7A) FEATURES  High breakdown voltage,BVCEO=-80V, And high current,IC=-0.
7A.
 Complementary the 2SD1767.
Pb Lead-free Production specification 2SB1189 ORDERING INFORMATION Type No.
Marking 2SB1189 BDP/BDQ/BDR SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.
7 A PC Collector power dissipation 500 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ E044 Rev.
A www.
gmesemi.
com 1 Production specification Medium power transistor(-80V,-0.
7A) 2SB...


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