DatasheetsPDF.com

HEB1119

Part Number	HEB1119
Manufacturer	HOTTECH
Description	GENERAL PURPOSE TRANSISTOR
Published	May 2, 2018
Detailed Description	REPLACEMENT TYPE :2SB1119 FEATURES  Low Collector-Emitter Saturation Voltage VCE(sat)  Satisfactory Operation Perform...
Datasheet	HEB1119 PDF File

Overview

REPLACEMENT TYPE :2SB1119 FEATURES  Low Collector-Emitter Saturation Voltage VCE(sat)  Satisfactory Operation Performances at High Efficiency with the Low Voltage Power Supply.
MAXIMUMRATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -25 Collector-Emitter Voltage VCEO -25 Emitter-Base Voltage VEBO -5 Collector Current-Continuous IC -1 Collector Power Dissipation PT 500 Junction Temperature TJ 150 Storage Temperature Tstg -55to+150 Unit V V V A mW °C °C HEB1119(PNP) GENERAL PURPOSE TRANSISTOR SOT-89 MARKING: BB 1: BASE 2:COLLECTOR 3:EMITTER ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Parameter Symbol Test ...

Similar Datasheet

HEB1119 GENERAL PURPOSE TRANSISTOR - HOTTECH

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)