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MMBT3906T

Part Number	MMBT3906T
Manufacturer	GME
Description	PNP General Purpose Transistor
Published	May 2, 2018
Detailed Description	Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.  Complementary ...
Datasheet	MMBT3906T PDF File

Overview

Production specification PNP General Purpose Transistor FEATURES  Epitaxial planar die construction.
 Complementary NPN type available (MMBT3904T).
 Low Current (Max:-200mA).
 Low Voltage(Max:-40V).
Pb Lead-free MMBT3906T APPLICATIONS  Ideal for medium power amplification and switching.
ORDERING INFORMATION Type No.
Marking MMBT3906T 3N SOT-523 Package Code SOT-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER MMBT3906T VCBO collector-base voltage -40 VCEO collector-emitter voltage -40 VEBO emitter-base voltage -5 IC collector current (DC) -200 Pd Power dissipation 150 RθJA Thermal resistance, junction to Ambient 833 Tstg storage temp...

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