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BLP8G10S-270PW

Part Number	BLP8G10S-270PW
Manufacturer	Ampleon
Description	Power LDMOS transistor
Published	Apr 27, 2018
Detailed Description	BLP8G10S-270PW Power LDMOS transistor Rev. 2 — 1 October 2015 Product data sheet 1. Product profile 1.1 General descr...
Datasheet	BLP8G10S-270PW PDF File

Overview

BLP8G10S-270PW Power LDMOS transistor Rev.
2 — 1 October 2015 Product data sheet 1.
Product profile 1.
1 General description 270 W LDMOS packaged symmetric Doherty power transistor for base station applications at frequencies from 700 MHz to 900 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a Doherty application test circuit.
VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.
5 V, unless otherwise specified.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB) (%) (dBc) 1-carrier W-CDMA 716 to 768 28 47.
5 17.
3 46 35 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.
65 dB at 0.
01% probability on CCDF per carrier.
1...

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BLP8G10S-270PW Power LDMOS transistor - Ampleon

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