Power LDMOS transistor - Ampleon
Description
BLP05H635XR; BLP05H635XRG
Power LDMOS transistor
Rev.
4 — 21 September 2016
Product data sheet
1.
Product profile
1.
1 General description
A 35 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
Table 1.
Application information
Test signal
f
(MHz)
pulsed RF
108
CW 63.
86
127.
72
VDS
PL
(V) (W)
50 35
50 35
50 35
Gp (dB) 27 29.
4 26.
8
D (%) 75 75.
6 75.
7
1.
2 Features and benefits
Easy power control Integrated double sided ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (HF to 600 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.
3 Applications
Industrial, scientific and medical applications Broadcast transmitter applications
BLP05H635XR; BLP05H635XRG
Power LDMOS transistor
2.
Pinning information
Table 2.
Pinning Pin Description BLP05H635XR (SOT1223-2) 1 gate 2 ...
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