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BLF8G10LS-270GV

Ampleon
Part Number BLF8G10LS-270GV
Manufacturer Ampleon
Description Power LDMOS transistor
Published Apr 26, 2018
Detailed Description BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 2 — 1 September 2015 Product data sheet 1. Product profile...
Datasheet PDF File BLF8G10LS-270GV PDF File

BLF8G10LS-270GV
BLF8G10LS-270GV

Overview
BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev.
2 — 1 September 2015 Product data sheet 1.
Product profile 1.
1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.
Test signal f VDS PL(AV) Gp D ACPR5M (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 869 to 894 28 67 19.
5 31 37[1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01 % probability on CCDF; carrier spacing 10 MHz.
1.
2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Designed for broadband operation (790 MHz to 960 MHz)  Lower output capacitance for improved performance in Doherty applications  Decoupling leads to enable improved video bandwidth (55 M...


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