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IXTP110N055T2

Part Number	IXTP110N055T2
Manufacturer	IXYS
Description	Power MOSFET
Published	Apr 26, 2018
Detailed Description	Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXT...
Datasheet	IXTP110N055T2 PDF File

Overview

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 VDSS = ID25 = RDS(on) ≤ 55V 110A 6.
6mΩ TO-263 (IXTA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IAR EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220 Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ± 20V, VDS = 0V IDSS...

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